Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layer

ABSTRACT

Generally, the present disclosure is directed work function adjustment in high-k metal gate electrode structures. In one illustrative embodiment, a method is disclosed that includes removing a placeholder material of a first gate electrode structure and a second gate electrode structure, and forming a first work function adjusting material layer in the first and second gate electrode structures, wherein the first work function adjusting material layer includes a tantalum nitride layer. The method further includes removing a portion of the first work function adjusting material layer from the second gate electrode structure by using the tantalum nitride layer as an etch stop layer, removing the tantalum nitride layer by performing a wet chemical etch process, and forming a second work function adjusting material layer in the second gate electrode structure and above a non-removed portion of the first work function adjusting material layer in the first gate electrode structure.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Generally, the present disclosure relates to the fabrication ofsophisticated integrated circuits including transistor elementscomprising highly capacitive gate structures on the basis of a high-kgate dielectric material of increased permittivity and a work functionmetal.

2. Description of the Related Art

The fabrication of advanced integrated circuits, such as CPUs, storagedevices, ASICs (application specific integrated circuits) and the like,requires the formation of a large number of circuit elements on a givenchip area according to a specified circuit layout, wherein field effecttransistors represent one important type of circuit element thatsubstantially determines performance of the integrated circuits.Generally, a plurality of process technologies are currently practiced,wherein, for many types of complex circuitry, including field effecttransistors, CMOS technology is currently one of the most promisingapproaches due to the superior characteristics in view of operatingspeed and/or power consumption and/or cost efficiency. During thefabrication of complex integrated circuits using, for instance, CMOStechnology, millions of transistors, i.e., N-channel transistors andP-channel transistors, are formed on a substrate including a crystallinesemiconductor layer. A field effect transistor, irrespective of whetheran N-channel transistor or a P-channel transistor is considered,typically comprises so-called PN junctions that are formed by aninterface of highly doped regions, referred to as drain and sourceregions, with a slightly doped or non-doped region, such as a channelregion, disposed adjacent to the highly doped regions. In a field effecttransistor, the conductivity of the channel region, i.e., the drivecurrent capability of the conductive channel, is controlled by a gateelectrode formed adjacent to the channel region and separated therefromby a thin insulating layer. The conductivity of the channel region, uponformation of a conductive channel due to the application of anappropriate control voltage to the gate electrode, depends on the dopantconcentration, the mobility of the charge carriers and, for a givenextension of the channel region in the transistor width direction, onthe distance between the source and drain regions, which is alsoreferred to as channel length. Hence, the conductivity of the channelregion substantially affects the performance of MOS transistors. Thus,as the speed of creating the channel, which depends on the conductivityof the gate electrode, and the channel resistivity substantiallydetermine the transistor characteristics, the scaling of the channellength, and associated therewith the reduction of channel resistivity,is a dominant design criterion for accomplishing an increase in theoperating speed of the integrated circuits.

Presently, the vast majority of integrated circuits are based on silicondue to substantially unlimited availability, the well-understoodcharacteristics of silicon and related materials and processes and theexperience gathered during the last 50 years. Therefore, silicon willlikely remain the material of choice for future circuit generationsdesigned for mass products. One reason for the importance of silicon infabricating semiconductor devices has been the superior characteristicsof a silicon/silicon dioxide interface that allows reliable electricalinsulation of different regions from each other. The silicon/silicondioxide interface is stable at high temperatures and, thus, allowsperforming subsequent high temperature processes, as are required, forexample, for anneal cycles to activate dopants and to cure crystaldamage without sacrificing the electrical characteristics of theinterface.

For the reasons pointed out above, in field effect transistors, silicondioxide is preferably used as a base material of a gate insulation layerthat separates the gate electrode, frequently comprised of polysiliconor metal-containing materials, from the silicon channel region. Insteadily improving device performance of field effect transistors, thelength of the channel region has continuously been decreased to improveswitching speed and drive current capability. Since the transistorperformance is controlled by the voltage supplied to the gate electrodeto invert the surface of the channel region to a sufficiently highcharge density for providing the desired drive current for a givensupply voltage, a certain degree of capacitive coupling, provided by thecapacitor formed by the gate electrode, the channel region and thesilicon dioxide disposed therebetween, has to be maintained. It turnsout that decreasing the channel length requires an increased capacitivecoupling to avoid the so-called short channel behavior during transistoroperation. The short channel behavior may lead to an increased leakagecurrent and to a pronounced dependence of the threshold voltage on thechannel length. Aggressively scaled transistor devices with a relativelylow supply voltage and thus reduced threshold voltage may suffer from anexponential increase of the leakage current, while also requiringenhanced capacitive coupling of the gate electrode to the channelregion. Thus, the thickness of the silicon dioxide layer has to becorrespondingly decreased to provide the required capacitance betweenthe gate and the channel region. For example, a channel length ofapproximately 0.08 μm may require a gate dielectric made of silicondioxide as thin as approximately 1.2 nm. Although, generally, usage ofhigh speed transistor elements having an extremely short channel may besubstantially restricted to high speed signal paths, whereas transistorelements with a longer channel may be used for less critical signalpaths, such as storage transistor elements, the relatively high leakagecurrent caused by direct tunneling of charge carriers through anultra-thin silicon dioxide gate insulation layer may reach values for anoxide thickness in the range or 1-2 nm that may not be compatible withthermal design power requirements for performance driven circuits.

Therefore, replacing silicon dioxide based dielectrics as the materialfor gate insulation layers has been considered, particularly forextremely thin silicon dioxide based gate layers. Possible alternativematerials include materials that exhibit a significantly higherpermittivity so that a physically greater thickness of a correspondinglyformed gate insulation layer provides a capacitive coupling that wouldbe obtained by an extremely thin silicon dioxide layer. It has thus beensuggested to replace silicon dioxide with high permittivity materials,such as tantalum oxide (Ta₂O₅), with a k of approximately 25, strontiumtitanium oxide (SrTiO₃), having a k of approximately 150, hafnium oxide(HfO₂), HfSiO, zirconium oxide (ZrO₂) and the like.

Additionally, transistor performance may be increased by providing anappropriate conductive material for the gate electrode to replace theusually used polysilicon material, since polysilicon may suffer fromcharge carrier depletion at the vicinity of the interface to the gatedielectric, thereby reducing the effective capacitance between thechannel region and the gate electrode. Thus, a gate stack has beensuggested in which a high-k dielectric material provides enhancedcapacitance based on the same thickness as a silicon dioxide basedlayer, while additionally maintaining leakage currents at an acceptablelevel. On the other hand, the non-polysilicon material, such as titaniumnitride and the like, in combination with other metals, may be formed soas to connect to the high dielectric material, thereby substantiallyavoiding the presence of a depletion zone. Since the threshold voltageof the transistors, which represents the voltage at which a conductivechannel forms in the channel region, is significantly determined by thework function of the metal-containing gate material, an appropriateadjustment of the effective work function with respect to theconductivity type of the transistor under consideration has to beguaranteed.

Providing different metal species for adjusting the work function of thegate electrode structures for P-channel transistors and N-channeltransistors at an early manufacturing stage may, however, be associatedwith a plurality of difficulties, which may stem from the fact that acomplex patterning sequence may be required during the formation of thesophisticated high-k metal gate stack, which may result in a significantvariability of the resulting work function and thus threshold of thecompleted transistor structures. For instance, during a correspondingmanufacturing sequence, the high-k material may be exposed to oxygen,which may result in an increase of layer thickness and thus a reductionof the capacitive coupling. Moreover, a shift of the work function maybe observed when forming appropriate work function metals in an earlymanufacturing stage, which is believed to be caused by a moderately highoxygen affinity of the metal species, in particular during hightemperature processes which may typically be required for completing thetransistor structures, for instance for forming drain and source regionsand the like.

For this reason, in some approaches, the initial gate electrode stackmay be provided with a high degree of compatibility with conventionalpolysilicon-based process strategies and the actual electrode metal andthe final adjustment of the work function of the transistors may beaccomplished in a very advanced manufacturing stage, i.e., aftercompleting the basic transistor structure. In a correspondingreplacement gate approach, the high-k dielectric material may be formedand may be covered by an appropriate metal-containing material, such astitanium nitride and the like, followed by a standard polysilicon oramorphous silicon material, which may then be patterned on the basis ofwell-established advanced lithography and etch techniques. Consequently,during the process sequence for patterning the gate electrode structure,the sensitive high-k dielectric material may be protected by themetal-containing material, possibly in combination with sophisticatedsidewall spacer structures, thereby substantially avoiding any unduematerial modification during the further processing. After patterningthe gate electrode structure, conventional and well-established processtechniques for forming the drain and source regions having the desiredcomplex dopant profile are typically performed. After any hightemperature processes, the further processing may be continued, forinstance, by forming a metal silicide, if required, followed by thedeposition of an interlayer dielectric material, such as silicon nitridein combination with silicon dioxide and the like. In this manufacturingstage, a top surface of the gate electrode structures embedded in theinterlayer dielectric material may be exposed, for instance, by etchtechniques, chemical mechanical polishing (CMP) and the like. In manycases, the polysilicon material may be removed in both types of gateelectrode structure in a common etch process and thereafter anappropriate masking regime may be applied in order to selectively fillin an appropriate metal, which may be accomplished by filling in thefirst metal species and selectively removing the metal species from oneof the gate electrode structures. Thereafter, a further metal materialmay be deposited, thereby obtaining the desired work function for eachtype of transistor.

Although in general this approach may provide advantages in view ofreducing process related non-uniformities in the threshold voltages ofthe transistors since the high-k dielectric material may be reliablyencapsulated during the entire process sequence without requiring anadjustment of the work function and thus the threshold voltage at anearly manufacturing stage, the complex process sequence for removing theplaceholder material and providing appropriate work function materialsfor the different types of transistors may also result in a significantdegree of variability of the transistor characteristics, which may thusresult in offsetting at least some of the advantages obtained by thecommon processing of the gate electrode structures until the basictransistor configuration is completed. With reference to FIGS. 1 a-1 c,a typical conventional process strategy will be described in order toillustrate in more detail any problems related to the provision of workfunction materials for P-channel transistors and N-channel transistorson the basis of a replacement gate approach.

FIG. 1 a schematically illustrates a cross-sectional view of asophisticated semiconductor device 100 in an advanced manufacturingstage, i.e., in a manufacturing stage in which a first transistor 150A,such as a P-channel transistor, and a second transistor 150B, such as anN-channel transistor, are formed in and above corresponding activeregions 103A, 103B. The active regions 103A, 103B are laterallydelineated by an isolation structure 103C, which is typically comprisedof appropriate dielectric materials, such as silicon dioxide, siliconnitride and the like. Moreover, in the advanced manufacturing stageillustrated in FIG. 1 a, drain and source regions 153 are provided,possibly in combination with metal silicide regions 154 in order toenhance overall conductivity when forming contact elements that connectto the drain and source regions 153 in a later manufacturing stage. Thedrain and source regions 153 laterally enclose a channel region 152, thethreshold voltage of which may have to be adjusted on the basis of thedrain and source regions 153, the general conductivity of the channelregion 152 and on the basis of an appropriate gate electrode structure.In the manufacturing stage shown, the transistors 150A, 150B compriserespective gate electrode structures 160A, 160B. The gate electrodestructures 160A, 160B may comprise a gate insulation layer 161 thatcomprises a high-k dielectric material, for instance in the form ofhafnium oxide, hafnium silicon oxide and the like. Furthermore,additional “conventional” dielectric materials, such as silicondioxide-based materials, may be incorporated into the gate insulationlayer 161, for instance in view of providing a superior interface withthe channel region 152. A titanium nitride cap layer 162 is formed onthe gate insulation layer 161, followed by a silicon dioxide-based linermaterial 163, which may have formed on the cap material 162 in an earlymanufacturing stage. Furthermore, a tantalum nitride layer 164 incombination with a titanium nitride layer 165 are formed in the gateelectrode structures 160A, 160B, wherein, in the example shown in FIG. 1a, the titanium nitride material 165 may represent a work functionadjusting material for the transistor 150A, which has to be removed fromthe gate electrode structure 160B so as to provide therein a furtherwork function adjusting material that is appropriate for the transistor150B. As is further illustrated in FIG. 1 a, the gate electrodestructures 160A, 160B may be laterally embedded in a dielectricmaterial, such as a spacer structure 155 and a portion of an interlayerdielectric material 110, which is provided in the form of a siliconnitride-based material 111 and a silicon dioxide material 112.

The semiconductor device 100 as illustrated in FIG. 1 a may be formed onthe basis of the following conventional process strategy. After formingthe active regions 103A, 103B by providing the isolation structure 103Cbased on well-established process techniques, a gate material stack maybe formed, for instance, by providing a conventional gate dielectricbase layer, such as a silicon dioxide-based material, followed by ahigh-k dielectric material, which may be covered by the titanium nitridelayer 162. Thereafter, a placeholder material, such as a siliconmaterial, for instance in the form of an amorphous silicon material or apolysilicon material, is deposited, possibly in combination with furthermaterials, such as cap layers and the like, as may typically be requiredfor patterning the gate layer stack and for the further processing ofthe device 100. During the deposition of the placeholder material, i.e.,the silicon material, typically the cap layer 162 may be exposed to anoxygen-containing ambient, which may result in an incorporation of anoxygen species, which is typically converted into a silicon andoxygen-containing material upon depositing the silicon material, therebyforming the liner 163. Next, advanced lithography and patterningstrategies may be applied in order to form replacement gate electrodestructures having a desired gate length, wherein the sensitive gateinsulation layer 161 may be protected by the cap layer 162. Thereafter,the integrity of the sensitive materials 161 and 162 may be increased byproviding a sidewall liner 166, for instance by forming a siliconnitride material. Thereafter, the further processing may be continued byforming the drain and source regions 153 in combination with the spacerstructure 155, which may be accomplished by any appropriatemanufacturing strategy. Thereafter, the metal silicide regions 154 maybe formed by well-established process techniques followed by thedeposition of the interlayer material 110, for instance in the form ofmaterials 111 and 112. Next, the top surface of the gate electrodestructures 160A, 160B may be exposed by removing material of the layer110, for instance by CMP followed by a selective etch process, forinstance based on wet chemical etch recipes and the like, in order toremove the placeholder material, i.e., the silicon material selectivelyto the spacer structure 155 and the interlayer dielectric material 110.For example, the plurality of efficient wet chemical etch recipes areavailable, such as potassium hydroxide-based agents, TMAH (tetramethylammonium hydroxide) and the like. The etch process may be stopped on thecap layer 162 or, if still present, on the liner 163, depending on theoverall process strategy. Thereafter, the tantalum nitride layer 164 isdeposited, for instance, by sputter deposition and the like, followed bythe deposition of the titanium nitride material 165, which representsthe actual work function material for the transistor 150A. The tantalumnitride layer 164 with a thickness of typically less than 5 nm isprovided so as to act as an etch stop material for removing the material165 selectively from the gate electrode structure 160B. For thispurpose, an appropriate etch mask 104 is provided, for instance in theform of a resist material and the like, in order to expose thetransistor 150B.

FIG. 1 b schematically illustrates the semiconductor device 100 whenexposed to an etch process 105 for removing the titanium nitride layer165 (FIG. 1 a) selectively to the etch stop layer 164. For convenience,only the transistor 150B is illustrated in FIG. 1 b.

As previously explained, the adjustment of the final work functioncritically depends on the material species positioned close to thechannel region 152, i.e., the gate insulation layer 161 and the titaniumnitride cap material 162, possibly in combination with the liner 163, ifstill present. Furthermore, although titanium nitride may represent amaterial that may be appropriate for obtaining a desired work functionfor the transistor 150A, the transistor 150B may require a differentatomic species, such as aluminum, lanthanum and the like, in order toobtain the desired high value for the work function, which finallyresults in the desired threshold voltage of the transistor 150B.Consequently, the tantalum nitride material 164 may be considereddisadvantageous in appropriately positioning the work function adjustingmaterial for the transistor 150B in close proximity to the channelregion 152 with a high degree of reliability and process uniformity.That is, the tantalum nitride material 164 may generally suppress thediffusion of the desired species such as lanthanum and may have alsoexperienced the etch process 105, thereby resulting in a more or lesspronounced degree of modification, which may thus also result in acertain degree of variability during the further processing in adjustingthe threshold voltage of the transistor 150B. For this reason, it ishighly desirable to remove the tantalum nitride material 164 prior todepositing the work function adjusting material for the transistor 150B.

FIG. 1 c schematically illustrates the semiconductor device 100 in amanufacturing stage in which the transistor 150B may be exposed to asputter etch ambient 106 in order to remove a bottom portion of thetantalum nitride material, which may result in the formation of“sidewall” spacers 1645 of the remaining tantalum nitride material. Thesputter etch ambient 106 may typically be established prior to a sputterdeposition process for depositing the work function material for thetransistor 150B, while, in other cases, if this material has to beprovided by a different deposition technique, the ambient 106 may beestablished as a separate process step. As previously indicated,generally, the thickness of the tantalum nitride material is in therange of 5 nm and less so that the removal process 106 may result in amodification of underlying materials, such as the materials 163, 162 and161. Consequently, in an area 106C, a high probability of modifying ordamaging the layer stack of the gate electrode structure 160B may exist,thereby contributing to a pronounced variability of the resultingtransistor characteristics. Consequently, although the removal of thetantalum nitride material may be advantageous in view of a subsequentdeposition of the work function material, the sputter etch process 106may introduce additional process non-uniformities, which may offset theadvantages obtained by the removal of the tantalum nitride material 164.

The present disclosure is directed to various methods and devices thatmay avoid, or at least reduce, the effects of one or more of theproblems identified above.

SUMMARY OF THE INVENTION

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an exhaustive overview of the invention. It is notintended to identify key or critical elements of the invention or todelineate the scope of the invention. Its sole purpose is to presentsome concepts in a simplified form as a prelude to the more detaileddescription that is discussed later.

Generally, the present disclosure relates to advanced semiconductordevices and methods for forming the same in which gate electrodestructures may be formed on the basis of a high-k dielectric material,wherein the work function for P-channel transistors and N-channeltransistors may be adjusted after completing the basic transistorconfiguration with an increased degree of reliability and uniformity byavoiding plasma-based etch techniques, such as sputter etching. For thispurpose, an efficient wet chemical etch recipe, in some illustrativeembodiments based on ammonium hydroxide, may be used in order to removea conductive barrier material such as a tantalum nitride material fromone type of transistor, thereby creating enhanced conditions forproviding a work function material for this transistor without undulycontributing to modification or damage of the remaining layer stackincluding a metal-containing cap material and the sensitive high-kdielectric material. Consequently, the adjustment of the work functionfor both types of transistors may be accomplished on the basis ofsuperior process conditions, thereby resulting in a reduced degree ofthreshold variability substantially without increasing the probabilityof creating etch-related damage during the selective removal of abarrier material or work function material in one type of transistor.

One illustrative method disclosed herein comprises forming a first gateelectrode structure above a first semiconductor region of asemiconductor device and forming a second gate electrode structure abovea second semiconductor region, wherein the first and second gateelectrode structures comprise a gate insulation layer including a high-kdielectric material, a metal-containing cap material formed on the gateinsulation layer and a placeholder material. At least the second gateelectrode structure comprises an etch stop liner that is located betweenthe metal-containing cap material and the placeholder material. Themethod further comprises removing the placeholder material in the firstand second gate electrode structures and forming one or more firstmaterial layers in the first and second gate electrode structures,wherein the one or more first material layers comprise a work functionmetal for the first gate electrode structure. The method furthercomprises removing the one or more first material layers selectivelyfrom the second gate electrode structure by using a wet chemical agentbased on ammonium hydroxide to etch at least one of the one or morematerial layers. Additionally, the method comprises forming one or moresecond material layers in the second gate electrode structure, whereinthe one or more second material layers comprise a work function metalfor the second gate electrode structure.

A further illustrative method disclosed herein comprises removing aplaceholder material of a first gate electrode structure and a secondgate electrode structure. Moreover, the method comprises forming a firstwork function adjusting material layer in the first and second gateelectrode structures, wherein the first work function adjusting materialcomprises a tantalum nitride layer. The method further comprisesremoving a portion of the first work function adjusting material layerfrom the second gate electrode structure by using the tantalum nitridelayer as an etch stop layer. Additionally, the method comprises removingthe tantalum nitride layer by performing a wet chemical etch process andforming a second work function adjusting material layer in the secondgate electrode structure and above a non-removed portion of the firstwork function adjusting material layer in the first gate electrodestructure.

One illustrative semiconductor device disclosed herein comprises a firsttransistor comprising a first gate electrode structure, wherein thefirst gate electrode structure comprises a first gate insulation layerincluding a high-k dielectric material, a metal-containing cap materialformed above the high-k dielectric material, a tantalum nitride layerformed above the metal-containing cap material and a first work functionadjusting material that is formed above the tantalum nitride layer.Moreover, the semiconductor device comprises a second transistorcomprising a second gate electrode structure that in turn comprises asecond gate insulation layer including the high-k dielectric material,the metal-containing cap material and a second work function adjustingmaterial that is formed above the metal-containing cap material and thatis formed on insulating sidewall surfaces of the second gate electrodestructure.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be understood by reference to the followingdescription taken in conjunction with the accompanying drawings, inwhich like reference numerals identify like elements, and in which:

FIGS. 1 a-1 c schematically illustrate cross-sectional views of asemiconductor device during various manufacturing stages in adjustingthe work function of sophisticated gate electrode structures on thebasis of a tantalum nitride etch stop material and a selective removalthereof based on sputter etch techniques, according to conventionalstrategies;

FIGS. 2 a-2 c schematically illustrate cross-sectional views of asemiconductor device during various manufacturing stages in providingtwo different work function adjusting material layers on the basis of aconductive etch stop material, such as a tantalum nitride material, thatmay be selectively removed on the basis of a wet chemical etch recipe,according to illustrative embodiments; and

FIGS. 2 d-2 e schematically illustrate cross-sectional views of thesemiconductor device according to further illustrative embodiments inwhich a work function adjusting material, such as a titanium nitridematerial, may be selectively removed on the basis of a wet chemical etchrecipe without providing an additional conductive etch stop material byusing a silicon and oxygen-containing material liner formed on aconductive cap material, according to still further illustrativeembodiments.

While the subject matter disclosed herein is susceptible to variousmodifications and alternative forms, specific embodiments thereof havebeen shown by way of example in the drawings and are herein described indetail. It should be understood, however, that the description herein ofspecific embodiments is not intended to limit the invention to theparticular forms disclosed, but on the contrary, the intention is tocover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION

Various illustrative embodiments of the invention are described below.In the interest of clarity, not all features of an actual implementationare described in this specification. It will of course be appreciatedthat in the development of any such actual embodiment, numerousimplementation-specific decisions must be made to achieve thedevelopers' specific goals, such as compliance with system-related andbusiness-related constraints, which will vary from one implementation toanother. Moreover, it will be appreciated that such a development effortmight be complex and time-consuming, but would nevertheless be a routineundertaking for those of ordinary skill in the art having the benefit ofthis disclosure.

The present subject matter will now be described with reference to theattached figures. Various structures, systems and devices areschematically depicted in the drawings for purposes of explanation onlyand so as to not obscure the present disclosure with details that arewell known to those skilled in the art. Nevertheless, the attacheddrawings are included to describe and explain illustrative examples ofthe present disclosure. The words and phrases used herein should beunderstood and interpreted to have a meaning consistent with theunderstanding of those words and phrases by those skilled in therelevant art. No special definition of a term or phrase, i.e., adefinition that is different from the ordinary and customary meaning asunderstood by those skilled in the art, is intended to be implied byconsistent usage of the term or phrase herein. To the extent that a termor phrase is intended to have a special meaning, i.e., a meaning otherthan that understood by skilled artisans, such a special definition willbe expressly set forth in the specification in a definitional mannerthat directly and unequivocally provides the special definition for theterm or phrase.

Generally, the present disclosure provides semiconductor devices andmanufacturing techniques in which a replacement gate approach may beapplied that may provide superior process uniformity and thus reducedvariability of transistor characteristics. To this end, unwantedconductive materials, such as titanium nitride, tantalum nitride and thelike, may be removed selectively from one gate electrode structure afterreplacing a placeholder material, based on a wet chemical etchtechnique, thereby significantly reducing the probability of creatingadditional etch-related damage in the underlying sensitive gate layerstack. In one illustrative embodiment disclosed herein, a tantalumnitride material that may be efficiently used as an etch stop layerduring the removal of a first work function adjusting material, such asa titanium nitride material, may be selectively removed from the othergate electrode structure by using a wet chemical agent, in oneillustrative embodiment provided on the basis of an ammoniumhydroxide/hydrogen peroxide mixture, which has been recognized to have asufficient etch selectivity with respect to even thin dielectricmaterials, such as silicon dioxide, silicon and oxygen-containingdielectric liners and the like. Thus, in some illustrative embodiments,the conductive barrier or etch stop material may be efficiently removedby providing a corresponding liner material in one or both of the gateelectrode structures in an early manufacturing stage, for instance upondepositing the placeholder material in the form of a silicon material,thereby maintaining a very efficient overall manufacturing flow comparedto conventional strategies. On the other hand, an unwanted portion ofthe conductive barrier material, such as a tantalum nitride material,may be efficiently removed substantially without damaging the conductivecap material or the sensitive high-k dielectric material. Consequently,after the deposition of a further work function adjusting materiallayer, such as a lanthanum material, aluminum and the like, enhancedconditions for diffusing the desired metal species towards the sensitivegate insulation material may be established while neverthelessaccomplishing a high degree of process uniformity. Therefore,replacement gate approaches in which the work function adjustingmaterials for both types of transistors may be provided in a very latemanufacturing stage may be applied more efficiently and may result insuperior transistor characteristics.

In still other illustrative embodiments, the high degree of etchselectivity of a wet chemical etch recipe may be used in order toprovide a first work function adjusting material, such as a titaniumnitride material, without an additional etch stop layer and selectivelyremoving the same from the other type of transistors, thereby reducingthe overall complexity of the manufacturing sequence.

With reference to FIGS. 2 a-2 e, further illustrative embodiments willnow be described in more detail wherein reference may also be made toFIGS. 1 a-1 c, if appropriate.

FIG. 2 a schematically illustrates a cross-sectional view of asemiconductor device 200 in an advanced manufacturing stage. Asillustrated, the device 200 may comprise a substrate 201 above which maybe formed a semiconductor layer 203. The substrate 201 may represent anyappropriate carrier material for forming thereabove the semiconductorlayer 203, which may represent a silicon-based semiconductor material, agermanium-containing silicon material and the like. Furthermore, aburied insulating layer (not shown) may be formed between the substratematerial 201 and the semiconductor layer 203, if an SOI(silicon-on-insulator) configuration is considered. In this case,corresponding active regions 203A, 203B formed in the semiconductorlayer 203 on the basis of appropriate isolation structures 203C may beinsulated from each other by the buried insulating layer and theisolation structures 203C. In other cases, a “bulk” configuration may beapplied in which the semiconductor layer 203 may represent an upperportion of a crystalline semiconductor material of the substrate 201. Ifappropriate, a bulk configuration and an SOI configuration may both beused in different areas of the semiconductor device 200. Moreover, inthe manufacturing stage shown, a transistor 250A may be formed in andabove the active region 203A and may represent a P-channel transistor.Similarly, a second transistor 250B may be formed in and above theactive region 203B and may represent an N-channel transistor. It shouldbe appreciated, however, that in other cases the transistors 250A, 250Bmay generally represent transistors that may require different types ofwork function adjusting materials in order to obtain the desiredthreshold voltages, irrespective of their conductivity type. Moreover,the transistors 250A, 250B may comprise drain and source regions 253,which may comprise metal silicide regions 254. Gate electrode structures260A, 260B of the transistors 250A, 250B, respectively, may comprise agate insulation layer 261, which separates a conductive cap material 262from a channel region 252. As previously discussed with reference to thesemiconductor device 100, the gate insulation layer 261 may comprise ahigh-k dielectric material of any appropriate type, while the capmaterial 262 may represent any appropriate metal-containing andconductive material for protecting the sensitive material in the layer261 and provide superior conditions during transistor operation, aspreviously explained. For example, the cap material 262 may be comprisedof titanium nitride. Moreover, in the embodiment shown, each of the gateelectrode structures 260A, 260B may comprise a liner material 263, forinstance in the form of a silicon and oxygen-containing dielectricmaterial with a thickness of approximately 1 nm to several nm, dependingon the process strategy and the device requirements. In otherillustrative embodiments, the liner material 263 may be selectivelyprovided in the gate electrode structure 260B in order to act as anefficient etch stop material during further processing, while thematerial 263 in the gate electrode structure 260A may be omitted or maybe provided with a significantly reduced thickness, thereby reducing adiffusion resistance in driving a certain metal species towards the gateinsulation layer 261 of the transistor 250A in a later manufacturingstage. Moreover, in the manufacturing stage shown, a placeholdermaterial such as a silicon material may be removed from the gateelectrode structures 260A, 260B and a conductive barrier material oretch stop material 264 in combination with a first work functionadjusting material 265 may be formed in the first and second gateelectrode structures 260A, 260B. Furthermore, as also previouslydiscussed with reference to the semiconductor device 100, a spacerstructure 255, possibly in combination with a sidewall liner material266, may laterally delineate the gate electrode structures 260A, 260B.Additionally, an interlayer dielectric material 210, possibly comprisingvarious material layers such as layers 211 and 212, may be provided. Itshould be appreciated that, if required, one or more of the materials ofthe interlayer dielectric material 210 may be provided with a highinternal stress level in order to enhance performance of one or both ofthe transistors 250A, 250B. For example, silicon nitride material,nitrogen-containing silicon carbide material and the like may beprovided with a high internal stress level, such as a compressive andtensile stress level, which may be advantageous in modifying the chargecarrier mobility in the channel regions 252.

The semiconductor device 200 as illustrated in FIG. 2 a may be formed onthe basis of process techniques which may, if desired, have a highdegree of compatibility with conventional techniques, as previouslydescribed with reference to the semiconductor device 100. For example,in some illustrative embodiments, the active regions 203A, 203B and thegate electrode structures 260A, 260B may be formed on the basis ofmanufacturing techniques as described before. In other embodiments,forming the gate insulation layer 261 and the cap material 262 may beaccompanied by an appropriate lithography process for providing theliner material 263 selectively in the gate electrode structure 260B,which may be accomplished by forming an appropriate dielectric linerwith a desired material composition and thickness and subsequentlyselectively removing this material from above the active region 203A. Aspreviously explained with reference to the semiconductor device 100,frequently, a silicon and oxygen-containing material may be formed upondepositing a placeholder material, such as an amorphous silicon materialor a polysilicon material, and this material may be maintained as aliner material 263 throughout the following manufacturing sequence. Inother cases, the creation of a corresponding silicon andoxygen-containing liner material may be suppressed by suppressingexposure of the device 200 to an oxygen-containing ambient anddepositing at least a portion of the placeholder material without undueoxygen contents within the deposition atmosphere. Thereafter, a portionof the material may be treated, for instance, by incorporating oxygen ina very controllable manner, for instance, by wet chemical oxidation andthe like, and selectively removing a corresponding oxidized portion onthe basis of a masking regime and a selective etch chemical, wherein aremaining portion of the previously supplied placeholder material may beused as an efficient etch stop material so as to not unduly cause aninteraction with the cap material 262. Thereafter, the remaining portionof the placeholder material, followed by any other materials as requiredfor patterning the gate electrode structures and performing subsequentmanufacturing processes, may be deposited. In this case, at least anasymmetry with respect to the liner material 263 may be created betweenthe gate electrode structure 260A and the gate electrode structure 260B,if considered appropriate.

In the following, it may be assumed that a substantially uniform linermaterial 263 may be provided in the first and second gate electrodestructures 260A, 260B with a thickness of approximately 0.5-5 nm, whilehigher values may also be used by appropriately controlling the exposureto oxygen, as previously discussed.

Subsequently the gate materials may be patterned, as previouslydescribed, followed by forming the sidewall liner 266, if required, inorder to further enhance overall integrity of the materials 261 and 262.Next, the drain and source regions 253 in combination with the sidewallspacer 255 may be formed, followed by performing a silicidation sequencefor providing the regions 254. Thereafter, the placeholder material maybe removed on the basis of any appropriate wet chemical or plasmaassisted etch process, wherein, at least in the second gate electrodestructure 260B, the corresponding etch process may stop on the linermaterial 263. Next, the layers 264 and 265 may be deposited, forinstance, by sputter deposition, chemical vapor deposition (CVD) and thelike. Thereafter, a mask 204 may be provided so as to remove an exposedportion of the work function material selectively from the secondtransistor 250B. In one illustrative embodiment, an etch ambient 205 maybe established by using a wet chemical etch recipe based on sulphuricacid (H₂SO₄) and hydrogen peroxide (H₂O₂), which may etch titaniumnitride material while exhibiting a significantly reduced etch rate fora tantalum nitride material. Consequently, during the etch process 205,the material 265 may be efficiently removed without damaging thesensitive materials 262, 261 in the gate electrode structure 260B, evenif the barrier layer 264 may be provided with a reduced thickness ofapproximately 5 nm and less.

FIG. 2 b schematically illustrates the transistor 250B of the device 200in a further manufacturing stage. As illustrated, the device 200 may beexposed to an etch ambient 206 for removing the exposed portion of theetch stop layer 264 substantially without modifying at least thesensitive materials 262 and 261 in the gate electrode structure 260B.For this purpose, a wet chemical etch ambient may be established so asto substantially completely remove the material 264 selectively to theliner material 263, which, in one illustrative embodiment, may beaccomplished on the basis of ammonium hydroxide in combination withhydrogen peroxide. For this purpose, the ammonium hydroxide (NH₄OH) andthe hydrogen peroxide may be provided as a diluted solution, which mayexhibit a moderately high etch rate for materials such as titaniumnitride, tantalum nitride and the like, while the etch resistivity ofdielectric materials, such as silicon nitride, silicon andoxygen-containing dielectric materials and the like, may be moderatelyhigh so that the removal of the thin layer 264 may not result in asignificant damage of the layer 262. Consequently, during the etchprocess 206, the liner 263 may efficiently act as an etch stop material,thereby efficiently suppressing any undue damage of the lower lyingsensitive material. Moreover, during the etch process 206, the material264 may also be removed from sidewall areas 260S, thereby exposing theliner 266. Consequently, improved uniformity may be obtained within theopening 260O of the gate electrode structure 260B after the depositionof a work function adjusting material for the transistor 250B. It shouldbe appreciated that the etch rate during the process 206 based onammonium hydroxide may depend on the composition, i.e., concentration ofthe various components, the temperature of the wet chemical solution,the material characteristics of the layer 264 so that, by givingconditions for these parameters, the etch process may be controlled bythe etch time so as to substantially completely remove the material 264within the opening 260O. For example, appropriate process parameters fora given composition of the material layer 264 may be readily determinedby selecting a plurality of different parameters for the etch process206, such as different concentration, different temperature, therebyobtaining corresponding etch rates for the various process parameters.Consequently, the etch recipe based on ammonium hydroxide provides ahigh degree of flexibility in determining appropriate process parametersfor removing tantalum nitride material that may be formed on the basisof any desired deposition technique which may thus result in differentmaterial characteristics. Furthermore, the parameters of the process 206may also be appropriately adapted to the characteristics of the linermaterial 263, for instance, the thickness and material compositionthereof, so as to obtain an appropriate removal rate in combination withan etch time, substantially without compromising the material layers 262and 261 during the process 206.

FIG. 2 c schematically illustrates the semiconductor device 200 in afurther advanced manufacturing stage. As illustrated, a work functionadjusting material 268 may be formed in the second gate electrodestructure 260B followed by an electrode material 267, which mayrepresent any appropriate metal-containing material, such as aluminum,tungsten and the like. Similarly, in the embodiment shown, the workfunction adjusting material 268 may also be formed in the gate electrodestructure 260A on the previously provided work function adjustingmaterial 265, followed by the electrode material 267. It should beappreciated that, in other illustrative embodiments (not shown), thematerial 268 may be removed from the gate electrode structure 260A, ifconsidered appropriate. The material 268 may be formed on the basis ofany appropriate deposition technique, such as CVD, sputter deposition,wherein, however, process parameters may be selected without anypre-sputter etch phase in order to not unduly compromise the sensitivematerials 262 and 261. For example, a plurality of appropriatematerials, such as lanthanum, aluminum and the like, may be deposited onthe basis of a plasma free ambient, thereby not unduly compromising thesensitive materials in the gate electrode structure 260B. Due to theprevious substantially complete removal of the material 264, thematerial 268 may also be deposited on the dielectric sidewall surfaceareas 260S so that the material 268 may extend across the entire length,indicated as 260L, of the gate electrode structure 260B. Consequently,superior uniformity of the resulting work function across the entirelength and width of the transistor 250B may be accomplished. After thedeposition of the material 268, an appropriate gate electrode materialmay be deposited commonly in the gate electrode structures 260A, 260B byusing any appropriate deposition technique. For example, aluminum,tungsten, or even highly conductive materials such as copper, may beused if a sufficient copper confinement capability of the materials 268,262 may suppress undue copper diffusion into sensitive areas of thetransistors 250A, 250B, such as the corresponding active regions 203A,203B. As previously explained, in some embodiments, after the depositionof the material 268, a portion thereof may be removed from the gateelectrode structure 260A, if considered appropriate, for instance, byproviding an appropriate etch mask and using the material 265 as anefficient stop material, wherein even a pronounced etch selectivity maynot be required, as long as a thickness of the material 265 may begreater than a thickness of the material 268.

After the deposition of the common electrode material 267, any excessmaterial may be removed, for instance by CMP and the like. Prior to orafter the removal of any excess material, if required, a heat treatmentmay be performed so as to diffuse the metal species towards the caplayer 262 and the gate insulation layer 261, thereby obtaining the finalwork function for the gate electrode structures 260A, 260B. Thereafter,the further processing may be continued by depositing a furtherinterlayer dielectric material and forming contact elements therein soas to connect to the transistors 250A, 250B as required by the overallcircuit configuration.

FIG. 2 d schematically illustrates the semiconductor device 200according to still further illustrative embodiments. As illustrated, thefirst work function adjusting material 265, for instance in the form ofa titanium nitride material, may be formed in the first and second gateelectrode structures 260A, 260B without providing a conductive barrieror etch stop material, such as a tantalum nitride layer, as previouslyexplained with reference to FIGS. 2 a-2 c. In this case, the material265 may be directly formed on the liner material 263 and the dielectricsidewall surface areas 260S in the first and second gate electrodestructures 260A, 260B. Moreover, in the manufacturing stage shown, thedevice 200 comprising the etch mask 204 may be exposed to the etchambient 206, which may, in some illustrative embodiments, be establishedon the basis of ammonium hydroxide and hydrogen peroxide, as previouslydiscussed, which may also efficiently etch titanium nitride materialselectively with respect to the liner material 263. With respect to thedetermination of appropriate parameters, the same criteria may apply aspreviously explained with reference to FIG. 2 b. Consequently, anappropriate temperature, concentration and etch time may be determinedfor given material characteristics of the layer 265 so as to not undulycompromise integrity of the cap material 262 in the second gateelectrode structure 260B.

FIG. 2 e schematically illustrates the semiconductor device 200 in afurther advanced manufacturing stage in which the second work functionadjusting material 268 may be formed in the first and second gateelectrode structures 260A, 260B. As illustrated, the material 268 mayalso be directly formed on the sidewall surface areas and the remainingliner 263, thereby obtaining the superior process conditions during thesubsequent processing for adjusting the final work function of the gateelectrode structure 260B. On the other hand, also the first material 265may be formed in close proximity to the cap material 263 and may extendacross the entire length of the gate electrode structure 260A, therebyalso providing superior process conditions in adjusting the final workfunction. On the other hand, the layer 265 may represent a diffusionresistance for the material 268 during the subsequent processes, such asa heat treatment, thereby substantially determining the thresholdvoltage on the basis of the species in the layer 265. It should beappreciated, however, that the material 268 may be selectively removedfrom the gate electrode structure 260A, if considered appropriate, aspreviously explained.

Thereafter, the further processing may be continued by depositing acommon electrode material and removing any excess material thereof, asdiscussed above.

As a result, the present disclosure provides semiconductor devices andmanufacturing techniques in which the work function of different gateelectrode structures may be adjusted in a very late manufacturing stage,i.e., after forming drain and source regions of corresponding transistorelements without applying any aggressive etch processes, such as sputteretch processes for selectively removing one or more material layers,which may be provided for adjusting the work function of one type oftransistor. For this purpose, at least one of the material layers may beremoved on the basis of a wet chemical etch recipe, therebysubstantially suppressing the damaging of the sensitive underlyingmaterials, such as the conductive cap material and the high-k dielectricmaterial. For example, tantalum nitride, which may be used as anefficient barrier or etch stop material, may be subsequently efficientlyremoved on the basis of an ammonium hydroxide agent withoutsignificantly compromising the underlying material layers.

The particular embodiments disclosed above are illustrative only, as theinvention may be modified and practiced in different but equivalentmanners apparent to those skilled in the art having the benefit of theteachings herein. For example, the process steps set forth above may beperformed in a different order. Furthermore, no limitations are intendedto the details of construction or design herein shown, other than asdescribed in the claims below. It is therefore evident that theparticular embodiments disclosed above may be altered or modified andall such variations are considered within the scope and spirit of theinvention. Accordingly, the protection sought herein is as set forth inthe claims below.

1-12. (canceled)
 13. A method, comprising: removing a placeholdermaterial of a first gate electrode structure and a second gate electrodestructure; forming a first work function adjusting material layer insaid first and second gate electrode structures, said first workfunction adjusting material layer comprising a tantalum nitride layer;removing a portion of said first work function adjusting material layerfrom said second gate electrode structure by using said tantalum nitridelayer as an etch stop layer; removing said tantalum nitride layer byperforming a wet chemical etch process; and forming a second workfunction adjusting material layer in said second gate electrodestructure and above a non-removed portion of said first work functionadjusting material layer in said first gate electrode structure.
 14. Themethod of claim 13, wherein said first work function adjusting materiallayer comprises a titanium nitride layer formed above said tantalumnitride layer.
 15. The method of claim 13, wherein said wet chemicaletch process is performed on the basis of ammonium hydroxide.
 16. Themethod of claim 14, wherein said titanium nitride layer is removed byperforming a wet chemical etch process based on sulphuric acid.
 17. Themethod of claim 13, further comprising providing an etch stop liner atleast in said second gate electrode structure between a metal-containingcap material formed on a high-k dielectric material and said placeholdermaterial, wherein said tantalum nitride layer is removed selectively tosaid etch stop liner.
 18. The method of claim 17, wherein said etch stopliner comprises a silicon and oxygen.
 19. The method of claim 18,wherein said etch stop liner is provided in said first and second gateelectrode structures. 20.-25. (canceled)
 26. The method of claim 19,wherein said etch stop liner is removed from said first gate electrodestructure prior to forming said first work function adjusting materiallayer.
 27. The method of claim 17, wherein removing said placeholdermaterial from said second gate electrode structure comprises using saidetch stop liner as an etch stop during a placeholder material removalprocess.
 28. A method, comprising: forming a first gate electrodestructure of a first transistor above a first semiconductor region of asemiconductor device and a second gate electrode structure of a secondtransistor above a second semiconductor region of said semiconductordevice, each of said first and second gate electrode structurescomprising a gate insulation layer comprised of a high-k dielectricmaterial, a metal-containing cap material formed above said gateinsulation layer, and a placeholder material formed above saidmetal-containing cap material; forming first and second opening in saidfirst and second gate electrode structures, respectively by removing atleast a portion of said placeholder material therefrom; forming a firstwork function adjusting material comprising a first work function metalfor said first transistor in each of said first and second openings,wherein said first work function adjusting material comprises at least afirst layer and a second layer formed above said first layer;selectively removing at least said second layer from said second openingby using said first layer as an etch stop layer; and forming a secondwork function adjusting material comprising a second work function metalfor said second transistor in at least said second opening.
 29. Themethod of claim 28, wherein said first layer of said first work functionadjusting material comprises tantalum nitride and said second layercomprises a metal-containing material layer.
 30. The method of claim 28,wherein selectively removing said second layer of said first workfunction adjusting material from said second opening comprisesperforming a wet chemical etch process.
 31. The method of claim 28,further comprising selectively removing said first layer of said firstwork function adjusting material from said second opening prior toforming said second work function adjusting material.
 32. The method ofclaim 31, wherein at least said second gate electrode further comprisesa liner material formed above said metal-containing cap material, andwherein selectively removing said first layer of said first workfunction adjusting material from said second opening comprises usingsaid liner material as an etch stop layer during an etch process. 33.The method of claim 32, wherein forming said liner material comprisesforming a first layer portion of said placeholder material above saidmetal-containing cap material, incorporating oxygen into said firstlayer portion, and thereafter forming a second layer portion of saidplaceholder material above said first layer portion.
 34. The method ofclaim 31, wherein removing at least said portion of said placeholdermaterial from said second opening comprises using said liner material asan etch stop during a placeholder material removal process.
 35. Themethod of claim 28, further comprising forming drain and source regionsin said first and second semiconductor regions and forming at least aportion of an interlayer dielectric material prior to removing saidplaceholder material.
 36. The method of claim 28, wherein forming saidfirst and second gate electrode structures comprises forming a silicondioxide base material and forming said high-k dielectric material onsaid silicon dioxide base material.
 37. The method of claim 28, whereinforming said second work function adjusting material comprises formingsaid second work function adjusting material in said first opening, themethod further comprising thereafter forming an electrode material insaid first and second openings.
 38. The method of claim 37, furthercomprising selectively removing said second work function adjustingmaterial from said first opening prior to forming said electrodematerial.